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What is claimed is:
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1.  A method for fabricating integrated
circuits in which regions of an
insulating film overlying a metallic
layer are chemically etched by a
chemical etchant, characterized in that
during chemical etching,
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	(a) a constant potential relative
to a reference electrode is maintained on at
least a portion of the metallic layer
such that a current is passed through a
path including said portion of the
metallic layer, said regions of the
insulat